Electrostatic discharge characterization of epitaxial-base silicon-germanium heterojunction bipolar transistors

Electrical Overstress/Electrostatic Discharge Symposium Proceedings

Volumn , Issue , 2000, Pages 239-250

  Voldman, S ^a   Juliano, P ^a   Schmidt, N ^a   Johnson, R ^a   Lanzerotti, L ^a   Joseph, A ^a   Brennan, C ^a   Dunn, J ^a   Harame, D ^a   Rosenbaum, E ^a   Meyerson, B ^a  

^a IBM RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC DISCHARGES; EPITAXIAL GROWTH; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS;

SILICON GERMANIUM ALLOY FILMS; TRANSMISSION LINE PULSE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0034544872     PISSN: 07395159     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (41)