An electro-thermal model of second breakdown

IEEE Transactions on Nuclear Science

Volumn 23, Issue 6, 1976, Pages 1679-1684

  Ward, A L ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; SEMICONDUCTOR DEVICES - MODELING;

SECOND BREAKDOWN;

SEMICONDUCTOR DIODES;

EID: 0017268899     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1976.4328561     Document Type: Article

References (10)

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7. C. R. Crowell and S. M. Sze, “Temperature Dependence of Avalanche Multiplication in Semiconductors”, Applied Physics Letters, vol. 9, No. 13, pp. 242–244, Sept. 1966.
8. S. M. Sze, “Physics of Semiconductor Devices”, New York, Wiley-Interscience, pp. 58-59, 496. 1969.
9. C. Y. Duh and J. L. Moll, “Electron Drift Velocity in Avalanche Silicon Diodes”, IEEE Transactions on Electron Devices, vol. ED-14, No. 1, pp. 46–49, January 1967.
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