Monte Carlo study of high performance resists for SCALPEL nanolithography

Microelectronic Engineering

Volumn 53, Issue 1, 2000, Pages 433-436

  Ocola, L E ^a   Li, W Y ^a   Kasica, R J ^a   Blakey, M I ^a   Orphanos, P A ^a   Waskiewicz, W K ^a   Novembre, A E ^a   Sato, M ^b  

^a LUCENT TECHNOLOGIES   (United States)

^b OHKA America Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; COMPUTER SIMULATION; ELECTRON BEAM LITHOGRAPHY; ELECTRON ENERGY LEVELS; ELECTRON SCATTERING; IONIZATION; MONTE CARLO METHODS; NANOTECHNOLOGY; SEMICONDUCTING SILICON; SURFACE ROUGHNESS;

ATOMIC COMPOSITION; HIGH PERFORMANCE RESIST; LOW ENERGY ELECTRON SCATTERING IN SOLID; SCALPEL;

PHOTORESISTS;

EID: 0034206299     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(00)00350-6     Document Type: Article

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