Medici simulation of 6H-SiC oxide ramp profile schottky structure

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 941-944

  Brezeanu, G ^a   Fernandez, J ^b   Millan J ^b   Badila, M ^c   Dilimot, G ^a  

^a UNIVERSITY POLITEHNICA OF BUCHAREST   (Romania)

^b INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^c National Institute for Research and Development in Microtechnologies IMT   (Romania)

Author keywords

Corner Volume Breakdown; Edge Effects; Oxide Ramp; Schottky Structure

Indexed keywords

COMPUTER SIMULATION; COMPUTER SOFTWARE; CURRENT DENSITY; ELECTRIC BREAKDOWN; ETCHING; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SILICON CARBIDE;

OXIDE RAMP ETCHING TECHNIQUE; SCHOTTKY STRUCTURE; SOFTWARE PACKAGE MEDICI;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0031674153     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.941     Document Type: Article

References (3)

1. M. Ruff, H. Mitlehner, IEEE Trans. El. Dev. vol. 41, (1994), p. 1040.
2. M. Badila, G. Brezeanu, Microelectron. Journal vol. 27, (1996), p. 67.
3. th Int. Semicond. Conf., Sinaia, Romania (1996), p.531.