Simulation of the electrical characteristics of high-voltage mesa and planar GaN Schottky and p-i-n rectifiers

IEEE Transactions on Electron Devices

Volumn 48, Issue 8, 2001, Pages 1498-1502

  Shelton, Bryan S ^a,b   Zhu, Ting Gang ^b   Lambert, Damien J H ^a,b   Dupuis, Russell D ^a,b  

^a IEEE   (United States)

^b The University of Texas at Austin   (United States)

Author keywords

Gallium nitride; P i n diodes; Rectifiers; Schottky barriers; Simulation

Indexed keywords

GALLIUM NITRIDE DIODE RECTIFIERS; SCHOTTKY BARRIER RECTIFIERS;

COMPUTER SIMULATION; ELECTRIC POTENTIAL; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SOLID STATE RECTIFIERS;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0035424351     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.936497     Document Type: Article

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