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Solid-State Electronics

Volumn 46, Issue 6, 2002, Pages 911-913

1.6 A GaN Schottky rectifiers on bulk GaN substrates

(8) Johnson, J W a Lou, B a Ren, F a Palmer, D b Pearton, S J c Park, S S d Park, Y J d Chyi, J I e

a University of Florida (United States)

b MCNC (United States)

c UNIVERSITY OF FLORIDA (United States)

d Samsung Advanced Institute of Technology (SAIT) (South Korea)

e NATIONAL CENTRAL UNIVERSITY (Taiwan)

Author keywords

Bulk substrate; GaN; HVPE; Rectifier; Schottky; Thermal package

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC RESISTANCE; GALLIUM NITRIDE; MESFET DEVICES; PASSIVATION; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES;

BULK SUBSTRATES;

SOLID STATE RECTIFIERS;

EID: 0036604577 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/S0038-1101(01)00339-2 Document Type: Article

Times cited : (15)

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