Comparison between aluminium and boron-doped junction termination extensions for high voltage 6H-SiC planar bipolar diodes

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 1045-1048

  Ortolland, S ^a   Locatelli, M L ^a   Planson, D ^a   Chante, J P ^a   Senes, A ^b  

^a CNRS   (France)

^b SCHNEIDER ELECTRIC   (France)

Author keywords

JTE; Peripheral Protection; Power Diode

Indexed keywords

ALUMINUM; BIPOLAR SEMICONDUCTOR DEVICES; COMPUTER SOFTWARE; ION IMPLANTATION; POWER ELECTRONICS; SEMICONDUCTING BORON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE;

BIPOLAR DIODES;

SEMICONDUCTOR DIODES;

EID: 11644269996     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.1045     Document Type: Review

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