Be diffusion in GaN

Materials Characterization

Volumn 49, Issue 4, 2003, Pages 337-341

  Chang, S J ^a   Lai, W C ^a   Chen, J F ^a   Chen, S C ^b   Huang, B R ^b   Liu, C H ^c   Liaw, U H ^d  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^c NAN JEON INSTITUTE OF TECHNOLOGY   (Taiwan)

^d CHIN MIN INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

Be; Diffusion; GaN; PL; SIMS

Indexed keywords

BERYLLIUM; DIFFUSION; LOW TEMPERATURE EFFECTS; METALLIC FILMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OHMIC CONTACTS; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY;

IONIZATION ENERGY;

GALLIUM NITRIDE;

EID: 0037768583     PISSN: 10445803     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1044-5803(03)00012-3     Document Type: Article

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