P-down InGaN/GaN multiple quantum wells light-emitting diode structure grown by metal-organic vapor-phase epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 4 B, 2002, Pages 2489-2492

  Ko, Chih Hsin ^a   Su, Yan Kuin ^a   Chang, Shoou Jinn ^a   Kuan, Ta Ming ^a   Chiang, Chung I ^b   Lan, Wen How ^b   Lin, Wen Jen ^b   Webb, James ^c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

^c NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

InGaN GaN; LED; MOVPE; MQW; p down; X ray

Indexed keywords

LIGHT EMITTING DIODES; LUMINESCENCE; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; X RAYS;

ACTIVE LAYERS; INGAN/GAN;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0000818761     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.41.2489     Document Type: Article

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