Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.3Ga0.7N/GaN short-period superlattice tunnelling contact layer

IEEE Electron Device Letters

Volumn 22, Issue 10, 2001, Pages 460-462

  Sheu, J K ^a   Tsai, J M ^b   Shei, S C ^b   Lai, W C ^c   Wen, T C ^c   Kou, C H ^c   Su, Y K ^c   Chang, S J ^c   Chi, G C ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b South Epitaxy Corporation   (Taiwan)

^c NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

InGaN; Light emitting diode; Short period superlattices; Tunnelling junction

Indexed keywords

CARRIER CONCENTRATION; ELECTRON TUNNELING; METALLORGANIC VAPOR PHASE EPITAXY; OHMIC CONTACTS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR SUPERLATTICES;

ELECTRON CONCENTRATION;

LIGHT EMITTING DIODES;

EID: 0035475638     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.954911     Document Type: Article

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