InGaN-GaN multiquantum-well blue and green light-emitting diodes

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 8, Issue 2, 2002, Pages 278-283

  Chang, S J ^b   Lai, W C ^b   Su, Y K ^a,b   Chen, J F ^a,b   Liu, C H ^c   Liaw, U H ^d  

^a IEEE

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c NAN JEON INSTITUTE OF TECHNOLOGY   (Taiwan)

^d CHIN MIN INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

DCXRD; EL; InGaN GaN; MQW; PL

Indexed keywords

COMPOSITION; CRYSTAL STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; ELECTROLUMINESCENCE; EPITAXIAL GROWTH; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; X RAY DIFFRACTION ANALYSIS;

CURRENT INJECTION; DOUBLE CRYSTAL X RAY DIFFRACTION; MULTIQUANTUM WELL; PEAK POSITION;

LIGHT EMITTING DIODES;

EID: 0036493177     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.999181     Document Type: Article

References (10)

1. High brightness blue, green and yellow light emitting diodes with quantum well structure
2. Crystal growth and conductivity control of group III-nitride semiconductors and their applications to short wavelength light emitters
3. InGaN/AlInGaN light emitting diodes
4. Band-edge electroabsorption in quantum well structure: The quantum-confined stark effects
5. Relation between electroabsorption in bulk semiconductors and in quantum wells: The quantum-confined Franz-Keldysh effect
6. Critical layer thickness determination of GaN/InGaN/GaN double heterostructures
7. Vertical high quality mirror-like facet of GaN-based devices by reactive ion etching
8. GaN metal-semiconductor-metal ultraviolet photodetectors with transparent indium-tin-oxide Schottky contacts
9. Photoluminescence investigation of InGaN/GaN single quantum well and multiple quantum wells
10. Characterization of high-quality InGaN/GaN multiquantum wells with time-resolved photoluminescence