Electrical and optical properties of beryllium-implanted Mg-doped GaN

Journal of Applied Physics

Volumn 92, Issue 4, 2002, Pages 1881-1887

  Yu, Chang Chin ^a   Chu, C F ^a   Tsai, J Y ^a   Lin, C F ^a   Wang, S C ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALED SAMPLES; ANNEALING PROCESS; AS-GROWN; CRYSTAL QUALITIES; ELECTRICAL AND OPTICAL PROPERTIES; GAN MATERIAL; HALL MEASUREMENTS; IMPLANTED SAMPLES; MG-DOPED; OPTICAL CHARACTERISTICS; SPECIFIC RESISTANCES; TEMPERATURE DEPENDENT PHOTOLUMINESCENCES; THREE ORDERS OF MAGNITUDE;

ACTIVATION ENERGY; ANNEALING; ATOMIC FORCE MICROSCOPY; BERYLLIUM; DEGRADATION; ELECTRIC PROPERTIES; GALLIUM NITRIDE; HOLE CONCENTRATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OHMIC CONTACTS; OPTICAL PROPERTIES; SUPERCONDUCTING FILMS; SURFACE MORPHOLOGY; X RAY DIFFRACTION;

DOPING (ADDITIVES);

EID: 0037103572     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1494110     Document Type: Article

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