Characterization of Si implants in p-type GaN

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 8, Issue 4, 2002, Pages 767-772

  Sheu, J K ^a   Lee, M L ^a,b   Tun, C J ^a   Kao, C J ^a   Yeh, L S ^a   Chang, S J ^b   Chi, G C ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

GaN; Hall measurement; Ion implantation; PL; Si; XRD

Indexed keywords

ACTIVATION ENERGY; CARRIER CONCENTRATION; GALLIUM NITRIDE; MAGNETIC FIELD MEASUREMENT; METALLORGANIC VAPOR PHASE EPITAXY; NITROGEN; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; X RAY DIFFRACTION ANALYSIS;

HALL EFFECT MEASUREMENT; VAN DER PAUW GEOMETRY;

ION IMPLANTATION;

EID: 0036661957     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2002.801688     Document Type: Article

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