Low temperature activation of Mg-doped GaN in O2 ambient

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 2 A, 2002, Pages

  Kuo, Cheng Huang ^a,b   Chang, Shoou Jinn ^a,b   Su, Yan Kuin ^a,b   Wu, Liang Wen ^a,b   Sheu, Jinn Kong ^a,b   Chen, Chin Hsiang ^a,b   Chi, Gou Chung ^a,b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

Hall measurement; InGaN GaN; Mg activation; Oxygen; PL

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY; GALLIUM NITRIDE; HOLE MOBILITY; MAGNESIUM PRINTING PLATES; OXYGEN; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

HALL MEASUREMENTS; HOLE CONCENTRATION;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0036478467     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.41.L112     Document Type: Article

References (15)