Nitride-based light-emitting diodes with Ni/ITO p-type ohmic contacts

IEEE Photonics Technology Letters

Volumn 14, Issue 12, 2002, Pages 1668-1670

  Lin, Y C ^a   Chang, S J ^a   Su, Y K ^a   Tsai, T Y ^a   Chang, C S ^a   Shei, S C ^b   Hsu, S J ^b   Liu, C H ^c   Liaw, U H ^d   Chen, S C ^e   Huang, B R ^e  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b South Epitaxy Corporation   (Taiwan)

^c NAN JEON INSTITUTE OF TECHNOLOGY   (Taiwan)

^d CHIN MIN INSTITUTE OF TECHNOLOGY   (Taiwan)

^e NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

GaN, light emitting diode (LED); Ni indium tin oxide (ITO); Transparent contact

Indexed keywords

INTERFACES (MATERIALS); NITRIDES; OHMIC CONTACTS; SEMICONDUCTOR JUNCTIONS;

THERMAL EVAPORATION;

LIGHT EMITTING DIODES;

EID: 0036894222     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2002.804649     Document Type: Article

References (23)

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