InGaN/GaN light emitting diodes with a p-down structure

IEEE Transactions on Electron Devices

Volumn 49, Issue 8, 2002, Pages 1361-1366

  Su, Y K ^a,b   Chang, S J ^b   Ko, Chih Hsin ^b   Chen, J F ^a,b   Kuan, Ta Ming ^b   Lan, Wen How ^a,c   Lin, Wen Jen ^c   Cherng, Ya Tung ^c   Webb, Jim ^d  

^a IEEE   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

^d NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

Double crystal X ray diffraction (DCXRD); Electroluminescence (EL); InGaN GaN; Light emitting diodes (LEDs); Multiquantum well (MQW); P down; Photoluminescence (PL)

Indexed keywords

DOUBLE CRYSTAL X RAY DIFFRACTION; INDIUM GALLIUM NITRIDE; MULTIQUANTUM WELLS; TURN ON VOLTAGE;

CRYSTAL STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; ELECTROLUMINESCENCE; GALLIUM NITRIDE; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY; TUNNEL DIODES; X RAY DIFFRACTION ANALYSIS;

LIGHT EMITTING DIODES;

EID: 0036683898     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.801277     Document Type: Article

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