400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 8, Issue 4, 2002, Pages 744-748

  Chang, S J ^b   Kuo, C H ^b   Su, Y K ^a,b   Wu, L W ^b   Sheu, J K ^c   Wen, T C ^b   Lai, W C ^b   Chen, J F ^a,b   Tsai, J M ^d  

^a IEEE

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^d South Epitaxy Corporation   (Taiwan)

Author keywords

AlGaN; Light emitting diode; Multiquantum well; Organometallic vapor phase epitaxy

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTROLUMINESCENCE; GALLIUM NITRIDE; LEAKAGE CURRENTS; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; X RAY DIFFRACTION ANALYSIS;

CARRIER CONFINEMENT; DOUBLE CRYSTAL X RAY DIFFRACTION; INDIUM GALLIUM NITRIDE;

LIGHT EMITTING DIODES;

EID: 0036661965     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2002.801677     Document Type: Article

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