Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes

IEEE Journal of Quantum Electronics

Volumn 38, Issue 5, 2002, Pages 446-450

  Wu, L W ^b   Chang, S J ^b   Wen, T C ^b   Su, Y K ^a,b   Chen, J F ^a,b   Lai, W C ^b   Kuo, C H ^b,c   Chen, C H ^b,c   Sheu, J K ^d  

^a IEEE

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c South Epitaxy Corporation   (Taiwan)

^d NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

InGaN GaN; Light emitting diode (LED); Multiple quantum well (MQW)

Indexed keywords

CRYSTALS; ELECTRIC POTENTIAL; GALLIUM NITRIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; X RAY DIFFRACTION ANALYSIS;

DOPING EFFECTS; INDIUM GALLIUM NITRIDE;

LIGHT EMITTING DIODES;

EID: 0036565354     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.998615     Document Type: Article

References (21)

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