GaN p-n junction diode formed by Si ion implantation into p-GaN

Solid-State Electronics

Volumn 46, Issue 12, 2002, Pages 2179-2183

  Lee, M L ^a   Sheu, J K ^a   Yeh, L S ^a   Tsai, M S ^a   Kao, C J ^a   Tun, C J ^a   Chang, S J ^b   Chi, G C ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; ELECTROLUMINESCENCE; GALLIUM NITRIDE; LIGHT EMITTING DIODES; OHMIC CONTACTS; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING;

CONTACT RESISTANCE;

ION IMPLANTATION;

EID: 0036890279     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00224-1     Document Type: Article

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