Acceptor ionization energies in gallium nitride: Chemical trends and electronegativities

Semiconductor Science and Technology

Volumn 11, Issue 5, 1996, Pages 827-829

  Podor B ^a  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CRYSTAL IMPURITIES; ENERGY GAP; IONIZATION; MATHEMATICAL MODELS; SEMICONDUCTOR DEVICE STRUCTURES;

ACCEPTOR IONIZATION ENERGIES; CHEMICAL TRENDS; ELECTRONEGATIVITIES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030143704     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/5/002     Document Type: Article

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