InGaN-AlInGaN multiquantum-well LEDs

IEEE Photonics Technology Letters

Volumn 13, Issue 6, 2001, Pages 559-561

  Lai, Wei Chih ^b   Chang, Shoou Jinn ^b   Yokoyam, Meiso ^b   Sheu, Jinn Kong ^c   Chen, Jone F ^a,b  

^a IEEE

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

AlInGaN; GaN; LED; MQW; QCSE

Indexed keywords

ELECTRIC CURRENTS; ELECTROLUMINESCENCE; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; VAPOR PHASE EPITAXY;

ALUMINUM INDIUM GALLIUM NITRIDE; BARRIER LAYER; INDIUM GALLIUM NITRIDE; INJECTION CURRENT;

LIGHT EMITTING DIODES;

EID: 0035364326     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.924019     Document Type: Article

References (11)

1. High-brightness InGaN blue, green and yellow light-emitting diodes with quantum well structures
2. Crystal growth and conductivity control of group III nitride semiconductors and their application to short wavelength light emitter
3. InGaN/GaN/AlGaN-based laser diodes with modulation doped strained-layer supperlattices
4. Segregation in regular ternary solutions
5. z
6. Optical properties of strained AlGaN and GaInN on GaN
7. Current-voltage characteristics of strained piezoelectric structures
8. Piezoresistive effect in wurtzite n-type GaN
9. Exciton localization in InGaN quantum well devices
10. Band-edge electroabsorption in quantum well structures: The quantum-confined Stark effect
11. Relation between electroabsorption in bulk semiconductors and in quantum wells: The quantum-confined Franz-Keldysh effect