High brightness green light emitting diodes with charge asymmetric resonance tunneling structure

IEEE Electron Device Letters

Volumn 23, Issue 3, 2002, Pages 130-132

  Chen, C H ^b   Su, Y K ^a,b   Chang, S J ^b   Chi, G C ^c   Sheu, J K ^b,c   Chen, J F ^a,b   Liu, C H ^d   Liaw, Y H ^e  

^a IEEE

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^d NAN JEON INSTITUTE OF TECHNOLOGY   (Taiwan)

^e CHIN MIN INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

Charge asymmetric resonance tunneling (CART); GaN; Green light emitting diode (LED); MQW

Indexed keywords

ELECTRON TUNNELING; METALLORGANIC VAPOR PHASE EPITAXY; QUANTUM EFFICIENCY; RESONANCE; SEMICONDUCTOR QUANTUM WELLS;

CHARGE ASYMMETRIC RESONANCE TUNNELING;

LIGHT EMITTING DIODES;

EID: 0036503675     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.988814     Document Type: Article

References (7)

1. Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes
2. High-efficiency InGaN MQW blue and green LEDs
3. Calculation of capture of carriers by quantum wells
4. Carrier capture into a semiconductor quantum well
5. Light emitting diode with charge asymmetric resonance tunneling