Secondary-ion mass spectroscopy (SIMS) investigations of Be and Si incorporation in GaN grown by molecular beam epitaxy (MBE)

Semiconductor Science and Technology

Volumn 11, Issue 4, 1996, Pages 538-541

  Cheng, T S ^a   Foxon, C T ^a   Jenkins, L C ^a   Hooper, S E ^a   Lacklison, D E ^a   Orton, J W ^a   Ber, B Ya ^b   Merkulov, A V ^b   Novikov, S V ^b  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

BERYLLIUM; CONCENTRATION (PROCESS); DIFFUSION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DOPING; SPECTROSCOPY; SUBSTRATES;

LOW ENERGY ELECTRON BEAM IRRADIATION; SECONDARY ION MASS SPECTROSCOPY MEASUREMENT; WURTZITE POLYTYPES; ZINC BLENDE POLYTYPES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030130242     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/4/014     Document Type: Article

References (15)

1. Morkoc H, Strite S, Gao G B, Lin M E, Sverdlov B and Burns M 1994 J. Appl. Phys. 76 1363
2. Amano H, Kito M, Hiramatsu K and Akasaki I 1989 Japan. J. Appl. Phys. 28 L2112
3. Nakamura S, Mukai T and Senoh M 1991 Japan. J. Appl. Phys. 30 L1998
4. Moustakas T D and Molnar R J 1993 Mater. Res. Soc. Symp. Proc. 281 753
5. Lin M E, Xue G, Zhou G L, Greene J E and Morkoc H 1993 Appl. Phys. Lett. 63 932
6. Wang C and Davis R F 1993 Appl. Phys. Lett. 63 990
7. Strite S 1994 Japan. J. Appl. Phys. 33 L699
8. J W Orton 1995 Semicond. Sci. Technol. 10 101
9. Cheng T S, Jenkins L C, Hooper S E, Foxon C T, Orton J W and Lacklison D E 1995 Appl. Phys. Lett. 66 1509
10. Foxon C T et al 1995 J. Crystal Growth 150 892
11. Hooper S E, Foxon C T, Cheng T S, Jenkins L C, Lacklison D E, Orton J W, Bestwick T, Kean A, Dawson M and Duggan G J 1995 J. Crystal Growth 155 157
12. Jenkins L C, Cheng T S, Foxon C T, Orton J W, Hooper S E, Novikov S V and Tret'yakov V V 1995 J. Vac. Sci. Technol. B 13 1585
13. Devine R L S, Foxon C T, Joyce B A, Clegg J B and Gowers J P 1987 Appl. Phys. A 44 195
14. Honig R E and Kramer D A 1969 RCA Rev. 30 285
15. Orton J W et al 1996 to be published