Experimental and theoretical study of ion distributions near 300 μm tall steps on rf-biased wafers in high density plasmas

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 21, Issue 1, 2003, Pages 147-155

  Woodworth, J R ^a   Miller, P A ^a   Shul, R J ^a   Abraham, I C ^a   Aragon, B P ^a   Hamilton, T W ^a   Willison, C G ^b   Kim, D ^c   Economou, D J ^c  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b L and M Technologies   (United States)

^c University of Houston   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; COMPUTER SIMULATION; CURRENT DENSITY; ELECTRIC DISCHARGES; ELECTRODES; ELECTRON ENERGY LEVELS; ETCHING; ION BOMBARDMENT; MICROELECTROMECHANICAL DEVICES; MONTE CARLO METHODS; PLASMAS; SILICON WAFERS;

GROUNDED ELECTRODES; HIGH DENSITY ARGON PLASMAS; INDUCTIVELY DRIVEN DISCHARGE; ION DISTRIBUTION; ION FLUX; RF BIASED WAFERS;

IONS;

EID: 0037279520     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1527951     Document Type: Article

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