In situ crystallisation in ZrO2 thin films during high temperature X-ray diffraction

Microelectronics Reliability

Volumn 41, Issue 7, 2001, Pages 995-998

  Zhao, C ^a   Roebben, G ^b   Bender, H ^a   Young, E ^c   Haukka, S ^d   Houssa, M ^a   Naili, M ^a   De Gendt, S ^a   Heyns, M ^a   Van Der Biest, O ^b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

^d ASM Microchemistry Oy   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; EVAPORATION; SILICON WAFERS; THIN FILMS; X RAY DIFFRACTION ANALYSIS; ZIRCONIA;

ATOMIC LAYER CHEMICAL VAPOR DEPOSITION (ALCVD); HIGH-TEMPERATURE X-RAY DIFFRACTION;

SEMICONDUCTING FILMS;

EID: 0035394783     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(01)00055-5     Document Type: Article

References (7)