Electron traps at interfaces between Si(100) and noncrystalline Al2O3, Ta2O5, and (Ta2O5)x(Al2O3) 1-x alloys

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 4, 2001, Pages 1606-1610

  Johnson, R S ^a   Hong, J G ^a   Lucovsky, G ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ALLOYS; AUGER ELECTRON SPECTROSCOPY; CAPACITANCE; CHARACTERIZATION; CURRENT DENSITY; ELECTRIC POTENTIAL; ELECTRON TRAPS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON; TANTALUM ALLOYS; THERMODYNAMIC STABILITY;

HOMOGENEOUS; PSEUDOBINARY; REMOTE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

INTERFACES (MATERIALS);

EID: 0035535376     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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