Thin-film capacitors with tantalum-hafnium oxide nanolaminate insulator

European Solid-State Device Research Conference

Volumn , Issue , 1998, Pages 444-447

  Kattelus, H P ^a   Ronkainen, H ^a   Kanniainen, T ^b   Skarp, J ^b  

^a VTT TECHNICAL RESEARCH CENTRE OF FINLAND   (Finland)

^b Microchemistry Ltd   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITORS; ELECTRIC FIELDS; ELECTRIC RESISTANCE; HAFNIUM; HAFNIUM OXIDES; OXIDE FILMS; OXIDES; TANTALUM; THIN FILM CIRCUITS;

CAPACITANCE DENSITY; CAPACITOR ELECTRODE; CMOS COMPATIBLE; HIGH PERMITTIVITY; HIGH-CAPACITANCE DENSITY; LOW-LEAKAGE CURRENT; SERIES RESISTANCES; THIN-FILM CAPACITORS;

TANTALUM OXIDES;

EID: 84908169866     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)

1. T, Kanniainen, J. Skarp, and H. Kattelus, "Growth of Dielectric Ta, OslHfO, Thin Film Nanolaminate Capacitors by Atomic Layer Epitaxy". The 1997 Joint International Meeting, The Electrochemical Society and The International Society of Electrochemistry, Paris, France, 1997, Meeting Abstracts Vol. 97-2, p. 1861.
2. S. Franssila, H. Kattelus, and E. Nykiinen, "Reduction of Molybdenum Resistivity by a Seed Layer of Ti-W". Microelectronic Engineering, 37/38 (1997), pp. 373-380.