Rotating compensator spectroscopic ellipsometry (RCSE) and its application to high-k dielectric film HfO2

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4099, Issue 1, 2000, Pages 228-234

  Leng, Jingmin ^a   Li, Shifang ^a   Opsal, Jon ^a   Aspnes, David ^b   Lee, Byoung Hun ^c   Lee, Jack ^c  

^a Therma Wave Inc   (United States)

^b Aspnes Associates Inc   (United States)

^c UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

Critical point model; Dispersion; Hafnium dioxide, Hafnium silicate interface; High k dielectric films; Rotating compensator spectroscopic ellipsometry; Transmission electron microscopy

Indexed keywords

ANNEALING; DIELECTRIC FILMS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC VARIABLES MEASUREMENT; HAFNIUM COMPOUNDS; MAGNETRON SPUTTERING; PERMITTIVITY; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

CRITICAL POINT MODELS; ROTATING COMPENSATOR SPECTROSCOPIC ELLIPSOMETRY (RCSE);

ELLIPSOMETRY;

EID: 0034543650     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.405823     Document Type: Article

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