High-K gate dielectrics

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3881, Issue , 1999, Pages 24-32

  Qi, Wen Jie ^a   Lee, Byoung Hun ^a   Nieh, Renee ^a   Kang, Laegu ^a   Jeon, Yongjoo ^a   Onishi, Katsu ^a   Lee, Jack C ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; DIELECTRIC FILMS; ELECTRIC BREAKDOWN; ELECTRON TRAPS; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; PERMITTIVITY; RELIABILITY; SEMICONDUCTING SILICON; THICKNESS MEASUREMENT; ZIRCONIA;

CAPACITANCE VOLTAGE CHARACTERISTICS; EQUIVALENT OXIDE THICKNESS; HEAT OF FORMATION;

THIN FILMS;

EID: 0033342871     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.360537     Document Type: Conference Paper

References (3)