ALD breaks materials, conformality barriers

Semiconductor International

Volumn 24, Issue 12, 2001, Pages 52-58

  Braun, Alexander E ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC BEAMS; CHEMICAL VAPOR DEPOSITION; GASES; MOS DEVICES; NITRIDES; SEMICONDUCTING SILICON; SPUTTER DEPOSITION; SURFACE REACTIONS;

ATOMIC LAYER DEPOSITION;

THIN FILMS;

EID: 0035475785     PISSN: 01633767     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (5)

1. U.S. Patent 4,058,420.
2. Atomic Layer Epitaxy, T. Suntola and M. Simpson, Eds., Blackie and Sons, 1990.
3. Atomic Layer Epitaxy, T. Suntola and M. Simpson, Id., p. 4.
4. S. Imai, et al, "Atomic Layer Epitaxy of Si Using Atomic II," Thin Solid Films 225, 1993, p. 168;
5. S.M. Bedair, "Atomic Layer Epitaxy Deposition Processes," J. Vac. Sci. Technol. B, January/February 1994.