Fermi-level-pinning defects in highly n-doped silicon

Physical Review Letters

Volumn 79, Issue 24, 1997, Pages 4834-4837

  Chadi, D J ^a   Citrin, P H ^b   Park, C H ^a   Adler, D L ^b   Marcus, M A ^b   Gossmann, H J ^b  

^a NEC LABORATORIES AMERICA   (United States)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001572772     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.79.4834     Document Type: Article

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