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Volumn 82, Issue 22, 1999, Pages 4464-4467

Electrically active and inactive b lattice sites in ultrahighly b doped si(001): An x-ray near-edge absorption fine-structure and high-resolution diffraction study

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EID: 0001107838     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.82.4464     Document Type: Article
Times cited : (38)

References (18)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.