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Volumn 54, Issue 20, 1996, Pages R14246-R14249

Orthorhombic symmetry DX centers in S-doped GaSb, GaAs, anAs

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Indexed keywords


EID: 0000300012     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.54.R14246     Document Type: Article
Times cited : (37)

References (30)
  • 1
    • 84927992698 scopus 로고
    • For a review article, see P.M. Mooney, J. Appl. Phys. 67, R1 (1990).
    • (1990) J. Appl. Phys. , vol.67 , pp. R1
    • Mooney, P.1
  • 9
    • 0022792450 scopus 로고
    • In some cases a breathing mode relaxation of atoms around an impurity gives a deep level. See, Z. Wasilewski and R.A. Stradling, Semicond. Sci. Technol. 1, 264 (1986).
    • (1986) Semicond. Sci. Technol. , vol.1 , pp. 264
    • Wasilewski, Z.1    Stradling, R.2
  • 20
    • 0001271532 scopus 로고
    • The CCB state is similar in symmetry and structure to the recently identified double broken bond (DBB) model C.H. Park and D.J. Chadi, Phys. Rev. Lett. 75, 1134 (1995)]. The DBB state involves bond formation between two second-neighbor anions and leads to the compensation of shallow acceptor impurities.
    • (1995) Phys. Rev. Lett. , vol.75 , pp. 1134
    • Park, C.1    Chadi, D.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.