Growth of single phase GaAs1-xNx with high nitrogen concentration by metal-organic molecular beam epitaxy

Applied Physics Letters

Volumn 70, Issue 24, 1997, Pages 3242-3244

  Qiu, Y ^a   Nikishin, S A ^a   Temkin, H ^a   Faleev, N N ^b   Kudriavtsev, Yu A ^b  

^a Texas Tech University   (United States)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001051345     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119137     Document Type: Article

References (14)

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