Electric field dependence of TDDB activation energy in ultrathin oxides

Microelectronics Reliability

Volumn 36, Issue 11-12 SPEC. ISS., 1996, Pages 1643-1646

  Vincent, E ^a,b   Revil, N ^a   Papadas, C ^a   Ghibaudo, G ^b  

^a STMICROELECTRONICS   (Italy)

^b Lab Phys Composants S   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC FIELD EFFECTS; OXIDES; SERVICE LIFE; STRESSES; CAPACITORS; GATES (TRANSISTOR); MOS DEVICES; SEMICONDUCTOR DEVICE MODELS; THIN FILMS;

OXIDE THICKNESS; TIME DEPENDENT DIELECTRIC BREAKDOWN (TDDB) ACTIVATION ENERGY; ACTIVATION ENERGY ATTENUATION; TIME DEPENDENT DIELECTRIC BREAKDOWN (TDDB);

ULTRATHIN FILMS; SEMICONDUCTING FILMS;

EID: 0030273978     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/0026-2714(96)00164-3     Document Type: Article

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