Scaled silicon MOSFET's: Universal mobility behavior

IEEE Transactions on Electron Devices

Volumn 44, Issue 4, 1997, Pages 577-583

  Vasileska, Dragica ^b   Ferry, David K ^a,b  

^a IEEE

^b ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; ELECTRONS; MATHEMATICAL MODELS; QUANTUM THEORY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SURFACES;

DEPLETION CHARGE; ELECTRON MOBILITY; INTERFACE ROUGHNESS SCATTERING;

MOSFET DEVICES;

EID: 0031118623     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.563361     Document Type: Article

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