Polysilicon quantization effects on the electrical properties of MOS transistors

IEEE Transactions on Electron Devices

Volumn 47, Issue 12, 2000, Pages 2366-2371

  Spinelli, Alessandro S ^a   Pacelli, Andrea ^b   Lacaita, Andrea L ^c  

^a UNIVERSITY OF INSUBRIA   (Italy)

^b Stony Brook University   (United States)

^c POLITECNICO DI MILANO   (Italy)

Author keywords

MOS devices; Mosfets; Quantization; Semiconductor device modeling

Indexed keywords

EID: 0000858448     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.887023     Document Type: Article

References (25)

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