-
1
-
-
0029535575
-
-
1995.
-
S. Takagi and A. Toriumi, "Quantitative understanding of inversionlayer capacitance in Si MOSFET's," IEEE Trans. Electron Devices, vol. 42, pp. 2125-2130, Dec. 1995.
-
And A. Toriumi, "Quantitative Understanding of Inversionlayer Capacitance in Si MOSFET's," IEEE Trans. Electron Devices, Vol. 42, Pp. 2125-2130, Dec.
-
-
Takagi, S.1
-
2
-
-
0030172380
-
-
1996.
-
C. -Y. Hu, S. Banerjee, and R. Sivan, "Quantization effects in inversion layers of PMOSFET's on Si (100) substrates," IEEE Electron Device Lett. , vol. 17, pp. 276-278, Feb. 1996.
-
S. Banerjee, and R. Sivan, "Quantization Effects in Inversion Layers of PMOSFET's on Si (100) Substrates," IEEE Electron Device Lett. , Vol. 17, Pp. 276-278, Feb.
-
-
Hu, C.Y.1
-
3
-
-
36448999747
-
-
1995.
-
M. Macucci, K. Hess, and G. J. lafrate, "Simulation of electronic properties and capacitance of quantum dots," J. Appl. Phys. , vol. 77, pp. 3267-3276, 1995.
-
K. Hess, and G. J. Lafrate, "Simulation of Electronic Properties and Capacitance of Quantum Dots," J. Appl. Phys. , Vol. 77, Pp. 3267-3276
-
-
Macucci, M.1
-
6
-
-
0001602281
-
-
1990.
-
T. Kerkhoven, A. T. Galick, U. Ravaioli, J. H. Arends, and Y. Saad, "Efficient numerical simulation of electron states in quantum wires," J. Appl. Phys. , vol. 68, pp. 3461-3469, 1990.
-
A. T. Galick, U. Ravaioli, J. H. Arends, and Y. Saad, "Efficient Numerical Simulation of Electron States in Quantum Wires," J. Appl. Phys. , Vol. 68, Pp. 3461-3469
-
-
Kerkhoven, T.1
-
7
-
-
0342762687
-
-
1991.
-
J. Sune, P. Olivo, and B. Riccö, "Self-consistent solution of the Poisson and Schrödinger equations in accumulated semiconductorinsulator interfaces," J. Appl. Phys. , vol. 70, pp. 337-345, 1991.
-
P. Olivo, and B. Riccö, "Self-consistent Solution of the Poisson and Schrödinger Equations in Accumulated Semiconductorinsulator Interfaces," J. Appl. Phys. , Vol. 70, Pp. 337-345
-
-
Sune, J.1
-
8
-
-
36549090780
-
-
1986.
-
S. E. Laux and F. Stern, "Electron states in narrow gate-induced channels in Si," Appl. Phys. Lett. , vol. 49, pp. 91-93, 1986.
-
And F. Stern, "Electron States in Narrow Gate-induced Channels in Si," Appl. Phys. Lett. , Vol. 49, Pp. 91-93
-
-
Laux, S.E.1
-
9
-
-
0028396643
-
-
vol. 37, pp. 411-414, 1994.
-
M. J. van Dort, P. H. Woerlee, and A. J. Walker, "A simple model for quantization effects in heavily-doped silicon MOSFET's at inversion conditions," Solid-State Electron. , vol. 37, pp. 411-414, 1994.
-
Dort, P. H. Woerlee, and A. J. Walker, "A Simple Model for Quantization Effects in Heavily-doped Silicon MOSFET's at Inversion Conditions," Solid-State Electron.
-
-
Van J, M.1
-
10
-
-
0029752460
-
-
1996.
-
S. A. Hareland, S. Krishnamurthy, S. Jallepalli, C. -F. Yeap, K. Hasnat, A. F. Tasch, Jr. , and C. M. Maziar, "A computationally effficient model for inversion layer quantization effects in deep submicron n-channel MOSFET's," IEEE Trans. Electron Devices, vol. 43, pp. 90-96, Jan. 1996.
-
S. Krishnamurthy, S. Jallepalli, C. -F. Yeap, K. Hasnat, A. F. Tasch, Jr. , and C. M. Maziar, "A Computationally Effficient Model for Inversion Layer Quantization Effects in Deep Submicron N-channel MOSFET's," IEEE Trans. Electron Devices, Vol. 43, Pp. 90-96, Jan.
-
-
Hareland, S.A.1
-
11
-
-
85032069152
-
-
vol. 54, pp. 437-672, 1982.
-
T. Ando, A. B. Fowler, and F. Stern, "Electronic properties of twodimensional systems," Rev. Mod. Phys. , vol. 54, pp. 437-672, 1982.
-
A. B. Fowler, and F. Stern, "Electronic Properties of Twodimensional Systems," Rev. Mod. Phys.
-
-
Ando, T.1
-
12
-
-
0030396118
-
-
1996, pp. 39902.
-
A. Spinelli, A. Benvenuti, and A. Pacelli, "Investigation of quantum effects in highly doped MOSFET's by means of a self-consistent 2-D model," in IEDM Tech. Dig. , 1996, pp. 39902.
-
A. Benvenuti, and A. Pacelli, "Investigation of Quantum Effects in Highly Doped MOSFET's by Means of A Self-consistent 2-D Model," in IEDM Tech. Dig.
-
-
Spinelli, A.1
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