Quantum effects along the channel of ultra-scaled Si-based MOSFETs?

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2000, Pages 291-294

  Chen, W ^a   Ouyang, Q ^a   Register, L F ^a   Banerjee, S K ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; HETEROJUNCTIONS; MATHEMATICAL MODELS; QUANTUM THEORY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS;

SILICON GERMANIDE;

MOSFET DEVICES;

EID: 0034453422     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)