Quantum-mechanical 2D simulation of surface- and buried-channel p-MOS

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 2000, Pages 192-195

  Spinelli, Alessandro S ^a   Benvenuti, Augusto ^a   Conserva, Lorenzo ^a   Lacaita, Andrea L ^a   Pacelli, Andrea ^a  

^a UNIVERSITY OF INSUBRIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARRIER MOBILITY; COMPUTER AIDED NETWORK ANALYSIS; COMPUTER SIMULATION; EIGENVALUES AND EIGENFUNCTIONS; ELECTRIC NETWORK SYNTHESIS; GATES (TRANSISTOR); QUANTUM EFFICIENCY; SEMICONDUCTOR DOPING;

QUANTUM MECHANICAL EFFECTS; SCHRODINGER EQUATIONS;

MOS DEVICES;

EID: 0033712006     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (15)