Nanofabrication using computer-assisted design and automated vector-scanning probe lithography

Applied Surface Science

Volumn 175-176, Issue , 2001, Pages 636-642

  Cruchon Dupeyrat, S ^a   Porthun, S ^b   Liu, G Y ^a  

^a WAYNE STATE UNIVERSITY   (United States)

^b RHK Technology Inc   (United States)

Author keywords

Atomic force microscopy; Automated scanning probe lithography; Nanofabrication; Nanografting; Self assembled monolayers

Indexed keywords

ATOMIC FORCE MICROSCOPY; AUTOMATION; COMPUTER AIDED DESIGN; INTEGRATED CIRCUIT LAYOUT; LITHOGRAPHY; SELF ASSEMBLY; VLSI CIRCUITS;

AUTOMATED SCANNING PROBE LITHOGRAPHY; NANOGRAFTING;

NANOTECHNOLOGY;

EID: 0035873694     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00076-9     Document Type: Article

References (56)

1. Quate C.F. Surf. Sci. 386:1997;259.
2. Wadu-Mesthrige K., Amro N.A., Garno J.C., Liu G.Y. Scanning. 21:1999;75.
3. Blawas A.S., Reichert W.M. Biomaterials. 19:1998;595.
4. Volodin A.P. Instrum. Exp. Tech. 41:1998;745.
5. Moon W.C., Yoshinobu T., Iwasaki H. Jpn. J. Appl. Phys. Part 1 - Regular Papers Short Notes Rev. Papers. 38:1999;483.
6. Irmer B., Kehrle M., Lorenz H., Kotthaus J.P. Semicond. Sci. Technol. 13:1998;A79-A82.
7. Itoua S., Joachim C., Rousset B., Fabre N. Nanotechnology. 5:1994;19.
8. Yamazaki K., Fujiwara A., Takahashi Y., Namatsu H., Kurihara K. Jpn. J. Appl. Phys. Part 1 - Regular Papers Short Notes Rev. Papers. 37:1998;6788.
9. Sugimura H., Nakagiri N. Nanotechnology. 8:1997;A15-A18.
10. She J., Song J.Q., Wang Y.C., Liu Z.F. Mol. Cryst. Liq. Cryst. Sci. Technol. Sec. A - Mol. Cryst. Liq. Cryst. 337:1999;313.
11. Kim J., Oh Y., Lee H., Shin Y., Park S. Jpn. J. Appl. Phys. Part 1 - Regular Papers Short Notes Rev. Papers. 37:1998;7148.
12. Oh Y., Kim J., Lee H. Mol. Cryst. Liq. Cryst. Sci. Technol. Sec. A - Mol. Cryst. Liq. Cryst. 337:1999;7.
13. Avramescu A., Uesugi K., Suemune I. Jpn. J. Appl. Phys. Part 1 - Regular Papers Short Notes Rev. Papers. 36:1997;4057.
14. Okada Y., Amano S., Kawabe M., Shimbo B.N., Harris J.S. Compound Semicond. 156:1998;577.
15. Notargiacomo A., Foglietti V., Cianci E., Capellini G., Adami M., Faraci P., Evangelisti F., Nicolini C. Nanotechnology. 10:1999;458.
16. Piner R.D., Zhu J., Xu F., Hong S.H., Mirkin C.A. Science. 283:1999;661.
17. Sohn L.L., Willett R.L. Surf. Sci. 362:1996;874.
18. Abadal G., Perez-Murano F., Barniol N., Aymerich X. Appl. Phys. A - Mater. Sci. Process. 66:1998;S791-S795.
19. Yasutake M., Ejiri Y., Hattori T. Jpn. J. Appl. Phys. Part 2 - Lett. 32:1993;L1021-L1023.
20. Melinte S., Nysten B., Bayot V. Superlattices Microstruct. 24:1998;79.
21. Brandow S.L., Dressick W.J., Dulcey C.S., Koloski T.S., Shirey L.M., Schmidt J., Calvert J.M. J. Vac. Sci. Technol. B. 15:1997;1818.
22. Held R., Heinzel T., Studerus P., Ensslin K. Phys. E. 2:1998;748.
23. Marrian C.R.K., Dobisz E.A., Dagata J.A. J. Vac. Sci. Technol. B. 10:1992;2877.
24. Snow E.S., Campbell P.M., Shanabrook B.V. Appl. Phys. Lett. 63:1993;3488.
25. Dagata J.A., Tseng W., Bennett J., Dobisz E.A., Schneir J., Harary H.H. J. Vac. Sci. Technol. A - Vac. Surf. Films. 10:1992;2105.
26. Delamarche E., Hoole A.C.F., Michel B., Wilkes S., Despont M., Welland M.E., Biebuyck H. J. Phys. Chem. B. 101:1997;9263.
27. Urban J., Brauer S., Mckinnon A.W., Horn J., Hjort K., Pagnia H., Koops H.W.P., Hartnagel H.L. Microelectron. Eng. 27:1995;113.
28. Schneir J., Dagata J.A., Harary H.H. J. Vac. Sci. Technol. A - Vac. Surf. Films. 11:1993;754.
29. Huang D.H., Uchida H., Aono H. Jpn. J. Appl. Phys. Part 2 - Lett. 33:1994;L190-L193.
30. Sugimura H., Uchida T., Kitamura N., Masuhara H. J. Vac. Sci. Technol. B. 12:1994;2884.
31. Hartwich J., Sundermann M., Kleineberg U., Heinzmann U. Appl. Surf. Sci. 145:1999;538.
32. Hartwich J., Dreeskornfeld L., Heisig V., Rahn S., Wehmeyer O., Kleineberg U., Heinzmann U. Appl. Phys. A - Mater. Sci. Process. 66:1998;S685-S688.
33. Lyding J.W. Proc. IEEE. 85:1997;589.
34. Baselt D.R., Clark S.M., Youngquist M.G., Spence C.F., Baldeschwiler J.D. Rev. Sci. Instrum. 64:1993;1874.
35. Clark S.M., Spence C.F., Youngquist M.G., Baldeschwiler J.D. Rev. Sci. Instrum. 63:1992;4296.
36. Humphry M.J., Chettle R., Moriarty P.J., Upward M.D., Beton P.H. Rev. Sci. Instrum. 71:2000;1698.
37. Klehn B., Kunze U. J. Appl. Phys. 85:1999;3897.
38. Hong S.H., Mirkin C.A. Science. 288:2000;1808.
39. Baur C., Bugacov A., Koel B.E., Madhukar A., Montoya N., Ramachandran T.R., Requicha A.A.G., Resch R., Will P. Nanotechnology. 9:1998;360.
40. Baur C., Gazen B.C., Koel B., Ramachandran T.R., Requicha A.A.G., Zini L. J. Vac. Sci. Technol. B. 15:1997;1577.
41. Xu S., Liu G.-Y. Scanning. 21:1999;71.
42. Xu S., Liu G.Y. Langmuir. 13:1997;127.
43. Xu S., Miller S., Laibinis P.E., Liu G.Y. Langmuir. 15:1999;7244.
44. Li S.F.Y., Ng H.T., Zhang P.C., Ho P.K.H., Zhou L., Bao G.W., Chan S.L.H. Nanotechnology. 8:1997;76.
45. P. Vettiger, et al., IBM J. Res. Dev. 44 (2000) 323.
46. Amro N.A., Xu S., Liu G.Y. Langmuir. 16:2000;3006.
47. Ross C.B., Sun L., Crooks R.M. Langmuir. 9:1993;632.
48. Song J.Q., Liu Z.F., Li C.Z., Chen H.F., He H.X. Appl. Phys. A - Mater. Sci. Process. 66:1998;S715-S717.
49. Okabe Y., Akiba U., Fujihira M. Appl. Surf. Sci. 157:2000;398.
50. Beake B.D., Leggett G.J. Phys. Chem. Chem. Phys. 1:1999;3345.
51. Zamborini F.P., Crooks R.M. J. Am. Chem. Soc. 120:1998;9700.
52. Schoer J.K., Zamborini F.P., Crooks R.M. J. Phys. Chem. 100:1996;11086.
53. Schoer J.K., Crooks R.M. Langmuir. 13:1997;2323.
54. Cooper E.B., Manalis S.R., Fang H., Dai H., Matsumoto K., Minne S.C., Hunt T., Quate C.F. Appl. Phys. Lett. 75:1999;3566.
55. Sugimura H., Takai O., Nakagiri N. J. Electroanal. Chem. 473:1999;230.
56. Kohmoto S., Nakamura H., Ishikawa T., Asakawa K. Appl. Phys. Lett. 75:1999;3488.