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6244300477
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-
note
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In a previous publication (ref 56) we indicated that scanning the surface with these mild conditions could lead to rapid modification of the surface. The sample from which we obtained the data in Figure 1 of ref 56 had been exposed to Cu underpotential deposition (UPD) and cyclic voltammetry prior to scanning by STM. As a result the SAM had been disrupted before the STM images were obtained. Interestingly, this method may have future utility for facilitating the patterning.
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-
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-
86
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-
6244233933
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-
note
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The Nanoscope software calculates the mean feature level in the roughness analysis feature by calculating the average of all the z values within a selected area relative to the z value of the tip when it engages the surface.
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-
-
-
87
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6244291070
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note
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ave is the average height of the N pixels over which the calculation is performed.
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-
-
-
88
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-
6244270270
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-
note
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We define the rms roughness factor (RRF) as RRF = (rms roughness of patterned area)/(rms roughness of the SAM-modified unpatterned Au(111) terrace).
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-
-
-
89
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0028404594
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Schönenberger, C.; Sondag-Huethorst, J. A. M.; Jorritsma, J.; Fokkink, L. G. J. Langmuir 1994, 10, 611-614.
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(1994)
Langmuir
, vol.10
, pp. 611-614
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-
Schönenberger, C.1
Sondag-Huethorst, J.A.M.2
Jorritsma, J.3
Fokkink, L.G.J.4
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90
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-
0000608369
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-
McCarley, R. L.; Dunaway, D. J.; Willicut, R. J. Langmuir 1993, 9, 2775-2777.
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(1993)
Langmuir
, vol.9
, pp. 2775-2777
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McCarley, R.L.1
Dunaway, D.J.2
Willicut, R.J.3
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91
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0028422095
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Bucher, J.-P.; Santesson, L.; Kern, K. Langmuir 1994, 10, 979-983.
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(1994)
Langmuir
, vol.10
, pp. 979-983
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Bucher, J.-P.1
Santesson, L.2
Kern, K.3
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93
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6244275802
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note
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We also occasionally observe this type of behavior after patterning large features (≥500 nm x 500 nm) with biases ≤∼3.5 V, when patterning the surface in low humidity environments, and we frequently observe this behavior when working in solution (ref 94).
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-
-
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94
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6244275076
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Unpublished results
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Schoer, J. K.; Ross, C. B.; Sun, L.; Zamborini, F. P.; Li, Y.; Chailapakul, O.; Crooks, R. M. Unpublished results.
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-
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Schoer, J.K.1
Ross, C.B.2
Sun, L.3
Zamborini, F.P.4
Li, Y.5
Chailapakul, O.6
Crooks, R.M.7
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95
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0000192090
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Delamarche, E.; Michel, B.; Kong, H.; Gerber, C.Langmuir 1994, 10, 4103-4108.
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(1994)
Langmuir
, vol.10
, pp. 4103-4108
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-
Delamarche, E.1
Michel, B.2
Kong, H.3
Gerber, C.4
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96
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6244272307
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note
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We typically observe less than 2 nm of drift during 4 patterning scans at 41 Hz scan rate and 256 x 256 pixel resolution (about 25 s).
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