Sub-10-nm overlay accuracy in electron beam lithography for nanometer-scale device fabrication

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 12 B, 1998, Pages 6788-6791

  Yamazaki, Kenji ^a   Fujiwara, Akira ^a   Takahashi, Yasuo ^a   Namatsu, Hideo ^a   Kurihara, Kenji ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

EB lithography; Nano device; Overlay accuracy; Single electron device

Indexed keywords

EID: 4244136899     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.6788     Document Type: Article

References (8)

1. Y. Takahashi, H. Namatsu, K. Kurihara, K. Iwadate, M. Nagase and K. Murase: IEEE Trasns. Electron Devices 43 (1996) 1213.
2. T. Chisholm, B. A. Wallan, H. Liu, E. Munro, J. Rouse and X. Zhu: Proc. SPIE 2858 (1996) 146.
3. H. Namatsu, M. Nagase, K. Kurihara, K. Iwadate and K. Murase: J. Vac. Sci. & Technol. B 13 (1995) 1473.
4. K. Yamazaki, K. Kurihara, T. Yamaguchi, H. Namatsu and M.Nagase: Jan. J. Appl. Phys. 36 (1997) 7552.
5. Y. Takahashi, M. Nagase, H. Namatsu, K. Kurihara, K. Iwadate, Y. Nakajima, S. Horiguchi, K. Murase and M. Tabe: Electron. Lett. 31 (1995) 136.
6. M. Nagase, A. Fujiwara, K. Yamazaki, Y. Takahashi, K. Murase and K. Kurihara: Microelectron. Eng. 41/42 (1998) 527.
7. A. Fujiwara, Y. Takahashi, K. Yamazaki, H. Namatsu, M. Nagase, K. Kurihara and K. Murase: Tech. Dig. IEDM (1997) p. 163.
8. K. Kurihara, K. Iwadate, H. Namatsu, M. Nagase and K. Murase: J. Vac. Sci. & Technol. B 13 (1995) 2170.