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Volumn 10, Issue 4, 1999, Pages 458-463

Atomic force microscopy lithography as a nanodevice development technique

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DEPOSITION; ELECTRON BEAM LITHOGRAPHY; MASKS; SURFACE ROUGHNESS;

EID: 0033313348     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/10/4/317     Document Type: Article
Times cited : (107)

References (15)
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    • Characterization of scanning tunnelling microscopy and atomic force microscopy based techniques for nanolithography on hydrogen-passivated silicon
    • Fontaine P A, Dubois E and Stievenard D 1998 Characterization of scanning tunnelling microscopy and atomic force microscopy based techniques for nanolithography on hydrogen-passivated silicon Appl. Phys. Lett. 73 2527-9
    • (1998) Appl. Phys. Lett. , vol.73 , pp. 2527-2529
    • Fontaine, P.A.1    Dubois, E.2    Stievenard, D.3
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    • Magno R and Bennett B R 1997 Nanostructure patterns written in III-V semiconductors by an atomic force microscope Appl. Phys. Lett. 70 1855-7
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    • Fabrication of silicon and metal nanowires and dots using mechanical atomic force lithography
    • Hu S, Hamidi A, Altmeyer S, Koster T, Spangenberg B and Kurz H 1998 Fabrication of silicon and metal nanowires and dots using mechanical atomic force lithography J. Vac. Sci. Technol. B 16 2822-4
    • (1998) J. Vac. Sci. Technol. B , vol.16 , pp. 2822-2824
    • Hu, S.1    Hamidi, A.2    Altmeyer, S.3    Koster, T.4    Spangenberg, B.5    Kurz, H.6
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    • Plasma etching - A discussion of mechanism
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  • 11
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.