A plasticity-based model of material removal in chemical-mechanical polishing (CMP)

IEEE Transactions on Semiconductor Manufacturing

Volumn 14, Issue 4, 2001, Pages 406-417

  Fu, Guanghui ^a   Chandra, Abhijit ^a   Guha, Sumit ^b,c   Subhash, Ghatu ^d  

^a Iowa State University of Science and Technology   (United States)

^b SpeedFam IPEC   (United States)

^c INTEL CORPORATION   (United States)

^d Michigan Technological University   (United States)

Author keywords

CMP; Material removal rate; Particle scale model

Indexed keywords

APPROXIMATION THEORY; CHEMICAL MECHANICAL POLISHING; INTERFACES (MATERIALS); MATHEMATICAL MODELS; PLASTIC DEFORMATION; PLASTICITY; PLASTICS; PRESSURE; SLURRIES; VELOCITY;

HYDROXYLATED LAYER; MATERIAL REMOVAL RATE; SOFT PAD; THIN ELASTIC BEAM;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0035508112     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/66.964328     Document Type: Article

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