Modelling the influence of pad bending on the planarization performance during CMP

Materials Research Society Symposium - Proceedings

Volumn 566, Issue , 1999, Pages 45-50

  Grillaert, Joost ^a   Meuris, M ^a   Vrancken, E ^a   Heylen, N ^a   Devriendt, K ^a   Fyen, W ^a   Heyns, M ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; LITHOGRAPHY; MATHEMATICAL MODELS; OXIDES; SPUTTERING;

CHEMICAL MECHANICAL POLISHING; OXIDE THICKNESS; PATTERN DENSITY; WITHIN DIE NON UNIFORMITY;

CHEMICAL POLISHING;

EID: 0033746112     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-566-45     Document Type: Article

References (7)

1. R.R. Divechaet al., CMPMIC 1997, p. 29.
2. J. Grillaert et al., Advanced Metallization and Interconnect Systems for ULSI Applications in 1996, MRS, p. 525 (1997)
3. B.E. Stine et al., CMP-MIC 1997, p. 266.
4. B.E. Stine et al., IEEE Transactions on Semiconductor Manufacturing, vol. 11, no. 13 129 (1998).
5. R.R. Divecha et al., J. Electrochem. Soc., 145, 1052 (1998)
6. J. Warnock, J. Electrochem. Soc., 138, 2398 (1991)
7. J. Grillaert et al., CMPMIC-97, p.