Measurement of the conduction band offsets in Si/Si1-x-yGe xCy and Si/Si1-yCy heterostructures using metal-oxide-semiconductor capacitors

Journal of Applied Physics

Volumn 85, Issue 2, 1999, Pages 978-984

  Singh, D V ^a   Rim, K ^a   Mitchell, T O ^a   Hoyt, J L ^a   Gibbons, J F ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; HETEROJUNCTIONS; LATTICE CONSTANTS; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; X RAY DIFFRACTION;

CAPACITANCE VOLTAGE CHARACTERISTICS; CARBON FRACTIONS; CONDUCTION BAND OFFSETS; GATE OXIDES;

MOS CAPACITORS;

EID: 0033554965     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.369218     Document Type: Article

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