Modeling of direct tunneling gate current in ultra-thin gate oxide MOSFETs: A comparison between simulators

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 1999, Pages 115-118

  Cassan, E ^a   Galdin, S ^a   Dollfus, P ^a   Hesto, P ^a  

^a UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; GATES (TRANSISTOR); MATHEMATICAL MODELS; ULTRATHIN FILMS;

DIRECT TUNNELING CURRENT;

MOSFET DEVICES;

EID: 0033283449     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)