Study of uniform and graded SiGe channel heterojunction p-MOSFETs using Monte Carlo simulation

Thin Solid Films

Volumn 294, Issue 1-2, 1997, Pages 259-262

  Dollfus, Philippe ^a   Galdin, Sylvie ^a   Arbey, Marie Emma ^a   Hesto, Patrice ^a  

^a CNRS   (France)

Author keywords

Monte Carlo analysis; MOSFET; SiGe

Indexed keywords

FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; MONTE CARLO METHODS; MOS DEVICES; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SIMULATION;

MOSFET DEVICES;

EID: 0031074705     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)09462-X     Document Type: Article

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