SCOPUS 정보 검색 플랫폼

Computational Materials Science

Volumn 21, Issue 4, 2001, Pages 496-504

Ab initio modeling study of boron diffusion in silicon

(4) Windl, W a Stumpf, R b Liu, X Y b Masquelier, M P b

a MOTOROLA INC (United States)

b MOTOROLA INC (United States)

Author keywords

Ab initio process modeling; Boron diffusion

Indexed keywords

ACTIVATION ENERGY; CHARGE TRANSFER; COMPUTER SIMULATION; CRYSTALLINE MATERIALS; DIFFUSION; ION IMPLANTATION; MATHEMATICAL MODELS; REACTION KINETICS; SEMICONDUCTING BORON;

INDUSTRIAL CLUSTERS;

SEMICONDUCTING SILICON;

EID: 0034885758 PISSN: 09270256 EISSN: None Source Type: Journal
DOI: 10.1016/S0927-0256(01)00197-5 Document Type: Article

Times cited : (9)

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